View 10-0B066PA030SB-M996F09_8905656.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

10-0B066PA030SB-M996F09 datasheet 23 jun. 2017 / revision 3 1 copyright vincotech maximum ratings t j = 25 c, unless otherwise specified parameter symbol condition value unit flow pack 0b 600 v / 30 a igbt3 (600 v) technology open emitter topology new ultra-compact housing single-screw heat sink mounting dedicated design for motor drive 10-0B066PA030SB-M996F09 flow 0 b 17mm housing schematic features target applications types inverter switch collector-emitter voltage v ces 600 v collector current i c t j = t jmax t s = 80 c 34 a repetitive peak collector current i crm t p limited by t jmax 90 a turn off safe operating area t j 150c, v ce 1200 v 90 a total power dissipation p tot t j = t jmax t s = 80 c 68 w gate-emitter voltage v ges 20 v short circuit ratings t sc t j 150 c 6 s v cc v ge = 15 v 360 v maximum junction temperature t jmax 175 c
10-0B066PA030SB-M996F09 datasheet 23 jun. 2017 / revision 3 2 copyright vincotech maximum ratings t j = 25 c, unless otherwise specified parameter symbol condition value unit inverter diode peak repetitive reverse voltage v rrm 600 v continuous (direct) forward current i f t j = t jmax t s = 80 c 32 a total power dissipation p tot t j = t jmax t s = 80 c 53 w maximum junction temperature t jmax 175 c module properties thermal properties storage temperature t stg -40+125 c operation temperature under switching condition t jop -40( t jmax - 25) c isolation properties isolation voltage v isol dc test voltage t p = 2 s 4000 v creepage distance min. 12,7 mm clearance min. 12,7 mm comparative tracking index cti > 200
10-0B066PA030SB-M996F09 datasheet 23 jun. 2017 / revision 3 3 copyright vincotech characteristic values parameter symbol conditions value unit v ge [v] v gs [v] v ce [v] v ds [v] v f [v] i c [a] i d [a] i f [a] t j [c] min typ max inverter switch static gate-emitter threshold voltage v ge(th) v ge = v ce 0,00043 25 5 5,8 6,5 v collector-emitter saturation voltage v cesat 15 30 25 1,1 1,51 1,9 v 125 1,71 collector-emitter cut-off current i ces 0 600 25 1,6 a gate-emitter leakage current i ges 20 0 25 300 na internal gate resistance r g none input capacitance c ies f = 1 mhz 0 25 25 1630 pf output capacitance c oes 108 reverse transfer capacitance c res 50 gate charge q g 15 400 30 25 167 nc thermal thermal resistance junction to sink r th(j-s) thermal grease thickness 50 m = 1 w/mk 1,41 k/w dynamic turn-on delay time t d(on) r goff = 16 15 300 30 25 106 ns 150 104 rise time t r 25 14 150 20 turn-off delay time t d(off) r gon = 16 25 146 150 171 fall time t f 25 92 150 112 turn-on energy (per pulse) e on q rfwd = 1,3 c 25 0,475 mws q rfwd = 2,7 c 150 0,665 turn-off energy (per pulse) e off 25 0,675 150 0,913
10-0B066PA030SB-M996F09 datasheet 23 jun. 2017 / revision 3 4 copyright vincotech characteristic values parameter symbol conditions value unit v ge [v] v gs [v] v ce [v] v ds [v] v f [v] i c [a] i d [a] i f [a] t j [c] min typ max inverter diode static forward voltage v f 30 25 1,65 1,95 v 125 1,62 reverse leakage current i r 600 25 27 a thermal thermal resistance junction to sink r th(j-s) thermal grease thickness 50 m = 1 w/mk 1,80 k/w dynamic peak recovery current i rrm 15 300 30 25 27 a 150 34 reverse recovery time t rr 25 146 ns 150 253 recovered charge q r d i /d t = 2285 a/s 25 1,338 c d i /d t = 1902 a/s 150 2,654 reverse recovered energy e rec 25 0,290 mws 150 0,568 peak rate of fall of recovery current ( d i rf /d t ) max 25 1752 a/s 150 815 thermistor rated resistance r 25 21,5 k deviation of r 100 r/r r 100 = 1486 100 -4,5 +4,5 % power dissipation p 25 210 mw power dissipation constant 25 3,5 mw/ k b-value b (25/50) 25 3884 k b-value b (25/100) 25 3964 k vincotech ntc reference f
10-0B066PA030SB-M996F09 datasheet 23 jun. 2017 / revision 3 5 copyright vincotech inverter switch characteristics figure 1. igbt figure 2. igbt typical output characteristics typical out put charact eristics i c = f( v ce ) i c = f( v ce ) t p = 250 s 25 c t p = 250 s v ge = 15 v 125 c t j = 125 c v ge from 7 v to 17 v in steps of 1 v figure 3. igbt figure 4. igbt typical transf er charact erist ics transient t hermal impedance as f unction of pulse du ration i c = f( v ge ) z th(j-s) = f( t p ) t p = 100 s 25 c d = t p / t v ce = 10 v 125 c r th(j-s) = 1,41 k/w r (k/w) (s) 3,67e-02 9,82e+00 1,46e-01 1,04e+00 5,44e-01 1,78e-01 3,36e-01 4,31e-02 2,08e-01 8,55e-03 6,31e-02 9,19e-04 7,45e-02 1,51e-04 t j : t j : igbt thermal model values 0 2 4 6 8 10 0 2 4 6 8 10 12 i i i i c cc c (a) (a) (a) (a) v vv v g e g e g e g e (v) (v)(v) (v) 0 5 10 15 20 25 30 0 1 2 3 4 5 i i i i c c c c (a) v vv v c e c ec e c e (v) 0 5 10 15 20 25 30 0 1 2 3 4 5 i i i i c cc c (a) v vv v c e c ec e c e (v) 7 v 8 v 9 v 10 v 11 v 12 v 13 v 14 v 15 v 16 v 17 v v ge : 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 z z z z t h(j t h(j t h(j t h(j - -- - s) s) s) s) (k/w) t tt t p pp p (s) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 10 1
10-0B066PA030SB-M996F09 datasheet 23 jun. 2017 / revision 3 6 copyright vincotech figure 5. igbt figure 6. igbt gate voltage vs gat e charge saf e operating area v ge = f( q g ) i c = f( v ce ) i c = 30 a d = single pulse t s = 80 oc v ge = 15 v t j = t jmax oc figure 7. igbt figure 8. igbt short circuit duration as a f unct ion of v ge typical short circuit current as a f unct ion of v ge t p sc = f( v ge ) i sc = f( v ge ) v ce = 400 v v ce 400 v t j 150 oc t j 150 oc 480 v 120 v 0 2,5 5 7,5 10 12,5 15 17,5 20 0 50 100 150 200 250 v v v v g e g e g e g e (v) q qq q g gg g (nc) 0 2 4 6 8 10 12 14 10 11 12 13 14 15 16 17 t t t t ps c ps c ps c ps c (s) v vv v g e g eg e g e (v) 0 100 200 300 400 500 600 12 13 14 15 16 17 18 19 20 i i i i sc sc sc sc (a) v vv v g e g e g e g e (v) dc 100ms 10ms 1ms 100s 10s 0,01 0,1 1 10 100 1 10 100 1000 i i i i c cc c (a) v vv v c e c ec e c e (v) inverter switch characteristics
10-0B066PA030SB-M996F09 datasheet 23 jun. 2017 / revision 3 7 copyright vincotech inverter diode characteristics figure 1. fwd figure 2. fwd typical f orward charact erist ics transient t hermal impedance as a f unct ion of pulse widt h i f = f( v f ) z th(j-s) = f( t p ) t p = 250 s 25 c d = t p / t 125 c r th(j-s) = 1,80 k/w fwd thermal model values r (k/w) (s) 7,95e-02 3,72e+00 2,06e-01 4,02e-01 7,04e-01 8,35e-02 4,39e-01 1,56e-02 2,12e-01 2,93e-03 1,68e-01 3,31e-04 t j : 0 15 30 45 60 75 90 0 1 2 3 4 5 i f (a) v f (v) z z z z t h(j t h(j t h(j t h(j - -- - s) s) s) s) (k/w) t tt t p pp p (s) 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 10 1 thermistor characteristics thermistor typical temperature characteristic typical thermistor resistance values typical ntc characteristic as a function of temperature r t = f( t ) 0 5000 10000 15000 20000 25000 25 50 75 100 125 r () t (c) ntc-typical temperature characteristic
10-0B066PA030SB-M996F09 datasheet 23 jun. 2017 / revision 3 8 copyright vincotech switching characteristics figure 1. igbt figure 2. igbt typical swit ching energy losses as a f unction of co llector current typical swit ching energy losses as a f unct ion of ga te resistor e = f( i c ) e = f( r g ) with an induc tive load at 25 c with an inductive load at 25 c v ce = 300 v t j : 150 c v ce = 300 v t j : 150 c v ge = 15 v v ge = 15 v r gon = 16 i c = 30 a r goff = 16 figure 3. fwd figure 4. fwd typical reverse recovered energy loss as a f unction of collector current typical reverse recovered energy loss as a f unct ion of gat e resist or e rec = f( i c ) e rec = f( r g ) with an induc tive load at 25 c with an inductive load at 25 c v ce = 300 v t j : 150 c v ce = 300 v t j : 150 c v ge = 15 v v ge = 15 v r gon = 16 i c = 30 a e rec e rec 0 0,2 0,4 0,6 0,8 1 0 10 20 30 40 50 60 e e e e (mws) (mws) (mws) (mws) i ii i c c c c (a) (a)(a) (a) e rec e rec 0 0,2 0,4 0,6 0,8 0 10 20 30 40 50 60 70 e e e e ( mws) ( mws) ( mws) ( mws) r rr r g g g g ( (( ( ) )) ) e ee e on on on on e on e ee e o ff o ff o ff o ff e off 0 0,4 0,8 1,2 1,6 0 10 20 30 40 50 60 e e e e (mws) (mws) (mws) (mws) i ii i c c c c (a) (a)(a) (a) e o n o n o n o n e off e on e off offoff off 0 0,4 0,8 1,2 1,6 2 0 10 20 30 40 50 60 70 e e e e ( mws) ( mws) ( mws) ( mws) r rr r g g g g ( (( ( ) )) )
10-0B066PA030SB-M996F09 datasheet 23 jun. 2017 / revision 3 9 copyright vincotech switching characteristics figure 5. igbt figure 6. igbt typical swit ching t imes as a f unct ion of collector current typical swit ching t imes as a f unct ion of gate resis tor t = f( i c ) t = f( r g ) with an induc tive load at with an inductive load at t j = 150 c t j = 150 c v ce = 300 v v ce = 300 v v ge = 15 v v ge = 15 v r gon = 16 i c = 30 a r goff = 16 figure 7. fwd figure 8. fwd typical reverse recovery t ime as a f unction of coll ector current typical reverse recovery t ime as a f unct ion of igbt t urn on gat e resist or t rr = f( i c ) t rr = f( r gon ) a t v ce = 300 v 25 c at v ce = 300 v 25 c v ge = 15 v t j : 150 c v ge = 15 v t j : 150 c r gon = 16 i c = 30 a t d(off ) t f t d(on) t r 0,001 0,01 0,1 1 0 10 20 30 40 50 60 t t t t ( (( ( ? s) s) s) s) i ii i c c c c (a (a(a (a ) )) ) t d(off ) t f t d(on) t r 0,001 0,01 0,1 1 0 10 20 30 40 50 60 70 t t t t ( (( ( ? s) s) s) s) r rr r g g g g ( (( ( ) )) ) t rr t rr 0 0,1 0,2 0,3 0,4 0,5 0 10 20 30 40 50 60 70 t t t t rr rr rr rr ( (( ( ? s) s) s) s) r rr r g on g on g on g on ( (( ( ) )) ) t rr t rr 0 0,1 0,2 0,3 0,4 0 10 20 30 40 50 60 t t t t rr rr rr rr ( (( ( ? s) s) s) s) i ii i c cc c (a) (a)(a) (a)
10-0B066PA030SB-M996F09 datasheet 23 jun. 2017 / revision 3 10 copyright vincotech switching characteristics figure 9. fwd figure 10. fwd typical recovered charge as a f unction of collector current typical recoved charge as a f unct ion of igbt t urn o n gate resistor q r = f( i c ) q r = f( r gon ) at at v ce = 300 v 25 c at v ce = 300 v 25 c v ge = 15 v t j : 150 c v ge = 15 v t j : 150 c r gon = 16 i c = 30 a figure 11. fwd figure 12. fwd typical peak reverse recovery current current as a f unct ion of collect or current typical peak reverse recovery current as a f unct ion of igbt t urn on gate resist or i rm = f( i c ) i rm = f( r gon ) a t v ce = 300 v 25 c at v ce = 300 v 25 c v ge = 15 v t j : 150 c v ge = 15 v t j : 150 c r gon = 16 i c = 30 a i rm i rm 0 20 40 60 80 0 10 20 30 40 50 60 70 i i i i r m r m r m r m (a) (a) (a) (a) r rr r go n go n go n go n ( (( ( ) )) ) q r q r 0 0,5 1 1,5 2 2,5 3 0 10 20 30 40 50 60 70 q q q q r rr r (c) (c) (c) (c) r rr r g o n g o n g o n g o n ( (( ( ) )) ) i rm i rm 0 10 20 30 40 0 10 20 30 40 50 60 i i i i r m r m r m r m (a) (a) (a) (a) i ii i c c c c (a) (a)(a) (a) q r q r 0 1 2 3 4 0 10 20 30 40 50 60 q q q q r rr r ( (( ( ? c) c) c) c) i ii i c c c c (a) (a)(a) (a)
10-0B066PA030SB-M996F09 datasheet 23 jun. 2017 / revision 3 11 copyright vincotech switching characteristics figure 13. fwd figure 14. fwd typical rat e of f all of f orward and reverse recover y current as a f unct ion of collect or current typical rat e of f all of f orward and reverse recovery curre nt as a f unction of igbt t urn on gat e resist or d i f /d t ,d i rr /dt = f( i c) d i f /d t ,d i rr /dt = f( r g) at v ce = 300 v 25 c at v ce = 300 v 25 c v ge = 15 v t j : 150 c v ge = 15 v t j : 150 c r gon = 16 i c = 30 a 0 2000 4000 6000 8000 0 10 20 30 40 50 60 70 d dd d i i i i /d /d /d /d t t t t (a/ (a/ (a/ (a/ ? s) s) s) s) r rr r g o n g o n g o n g o n ( (( ( ) )) ) d i ii i f ff f / // / d t tt t d i ii i r r r rr r r r / // / d t tt t 0 500 1000 1500 2000 2500 3000 0 10 20 30 40 50 60 d dd d i i i i /d /d /d /d t t t t (a/ (a/ (a/ (a/ s) s) s) s) i ii i c c c c (a) (a)(a) (a) d i ii i f ff f / // / d t tt t d i ii i r r r rr r r r / // / d t tt t figure 15. igbt reverse bias saf e operating area i c = f( v ce ) at t j = 175 c r gon = 16 r goff = 16 0 10 20 30 40 50 60 70 0 100 200 300 400 500 600 700 i i i i c c c c (a) (a) (a) (a) v vv v c e c e c e c e (v) (v)(v) (v) i ii i c max c maxc max c max v v v v ce ce ce ce max max max max i i i i c cc c m odule m odule m odule m odule i i i i c cc c chip chip chip chip
10-0B066PA030SB-M996F09 datasheet 23 jun. 2017 / revision 3 12 copyright vincotech t j 150 c r gon 16 r goff 16 figure 1. igbt figure 2. igbt turn-of f swit ching wavef orms & def inition of t dof f , t eof f (t eof f = integrat ing t ime f or eof f ) turn-on s witching wavef orms & def init ion of t don, teon (t eon = integrat ing time f or eon) v ge (0%) = -15 v v ge (0%) = -15 v v ge (100%) = 15 v v ge (100%) = 15 v v c (100%) = 300 v v c (100%) = 300 v i c (100%) = 30 a i c (100%) = 30 a t doff = 0,171 s t don = 0,104 s t eoff = 0,437 s t eon = 0,259 s figure 3. igbt figure 4. igbt turn-of f swit ching wavef orms & def inition of t f turn-on switching wavef orms & def init ion of t r v c (100%) = 300 v v c (100%) = 300 v i c (100%) = 30 a i c (100%) = 30 a t f = 0,112 s t r = 0,020 s = general conditions == i c 1% v ce 90% v ge 90% -25 0 25 50 75 100 125 0 0,1 0,2 0,3 0,4 0,5 0,6 % t tt t (s) (s)(s) (s) t doff t eoff v ce i c v ge i c 10% v ge 10% t don v ce 3% -50 0 50 100 150 200 250 2,95 3,03 3,11 3,19 3,27 3,35 3,43 % t tt t (s) (s)(s) (s) i c v ce t eon v ge fitted i c10% i c 90% i c 60% i c 40% -25 0 25 50 75 100 125 0,12 0,18 0,24 0,3 0,36 0,42 0,48 0,54 % t tt t (s) (s)(s) (s) v ce i c t f i c 10% i c 90% -50 0 50 100 150 200 250 3,08 3,1 3,12 3,14 3,16 3,18 3,2 3,22 % t tt t (s) (s)(s) (s) t r v ce i c switching characteristics
10-0B066PA030SB-M996F09 datasheet 23 jun. 2017 / revision 3 13 copyright vincotech switching characteristics figure 5. igbt figure 6. igbt turn-of f swit ching wavef orms & def init ion of t eof f turn-on swit ching wavef orms & def init ion of teon p off (100%) = 9,01 kw p on (100%) = 9,01 kw e off (100%) = 0,91 mj e on (100%) = 0,67 mj t eoff = 0,44 s t eon = 0,26 s figure 7. fwd turn-of f swit ching wavef orms & def init ion of t rr v f (100%) = 300 v i f (100%) = 30 a i rrm (100%) = -34 a t rr = 0,253 s i c 1% v ge 90% -25 0 25 50 75 100 125 0 0,1 0,2 0,3 0,4 0,5 0,6 % t tt t (s) (s)(s) (s) p off e off t eoff v ce 3% v ge 10% -50 0 50 100 150 200 2,96 3,03 3,1 3,17 3,24 3,31 % t tt t ( s) ( s)( s) ( s) p on e on t eon i rrm 10% i rrm 90% i rrm 100% t rr -150 -100 -50 0 50 100 150 3,07 3,14 3,21 3,28 3,35 3,42 % t tt t (s) (s)(s) (s) i f v f fitted
10-0B066PA030SB-M996F09 datasheet 23 jun. 2017 / revision 3 14 copyright vincotech switching characteristics figure 8. fwd figure 9. fwd turn-on swit ching wavef orms & def init ion of t qr (t qr = int egrat ing t ime f or q r ) turn-on swit ching wavef orms & def init ion of t erec (t erec = int egrating t ime f or e rec ) i f (100%) = 30 a p rec (100%) = 9,01 kw q r (100%) = 2,65 c e rec (100%) = 0,57 mj t qr = 0,49 s t erec = 0,49 s t qr -150 -100 -50 0 50 100 150 3 3,2 3,4 3,6 3,8 % t tt t (s) (s)(s) (s) i f q r -150 -100 -50 0 50 100 150 3 3,2 3,4 3,6 3,8 % t tt t (s) (s)(s) (s) p rec e rec t erec
10-0B066PA030SB-M996F09 datasheet 23 jun. 2017 / revision 3 15 copyright vincotech date code ul & vin lot serial wwyy ul vin lllll ssss type&ver lot number serial date code tttttttvv lllll ssss wwyy pin x y function 1 27,8 0 g6 2 24,9 0 e6 3 19,1 0 g5 4 16,2 0 e5 5 11,6 0 ntc2 6 7,6 0 ntc1 7 2,9 0 e4 8 0 0 g4 9 0 13,7 u 10 2,9 13,7 g1 11 8,8 13,7 dc+ 12 14,6 13,7 v 13 17,5 13,7 g2 14 24,9 13,7 g3 15 27,8 13,7 w ordering code & marking pin table [mm] name nn-nnnnnnnnnnnnnn-ttttttvv outline text datamatrix version without thermal paste 17mm housing with solder pins ordering code 10-0B066PA030SB-M996F09 nn-nnnnnnnnnnnnnn ttttttvv wwyy ul vin lllll ssss
10-0B066PA030SB-M996F09 datasheet 23 jun. 2017 / revision 3 16 copyright vincotech thermistor id igbt fwd component t1-t6 d1-d6 600 v ntc thermistor pinout inverter diode identification comment 600 v voltage current function 30 a inverter switch 30 a
10-0B066PA030SB-M996F09 datasheet 23 jun. 2017 / revision 3 17 copyright vincotech disclaimer the information, specifications, procedures, method s and recommendations herein (together information ) are presented by vincotech to reader in good faith, are believed to be accurate a nd reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. vincotech reserves the rig ht to make any changes without further notice to an y products to improve reliability, function or design. no representation, guarantee or warranty is made to reader as to the accuracy, rel iability or completeness of said information or that the application or use of any o f the same will avoid hazards, accidents, losses, d amages or injury of any kind to persons or property or that the same will not infringe thir d parties rights or give desired results. it is rea ders sole responsibility to test and determine the suitability of the information and the product for readers intended use. life support policy vincotech products are not authorised for use as cr itical components in life support devices or system s without the express written approval of vincotech. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implan t into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for u se provided in labelling can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, o r to affect its safety or effectiveness. packaging instruction standard packaging quantity (spq) 160 >spq standard 10-0B066PA030SB-M996F09-d3-14 23 jun. 2017

▲Up To Search▲

Price & Availability of 10-0B066PA030SB-M996F09

	To Download 10-0B066PA030SB-M996F09 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .